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快光電探測器:UPD系列

更新:2024/2/19 15:33:21      點擊:
  • 產(chǎn)品品牌   Alphalas
  • 產(chǎn)品型號   UPD Series
  • 產(chǎn)品描述   UPD的系列快光電探測器是適合于從直流到25 GHz的光波形的測量。各種型號均上升時間短15 ps和覆蓋的光譜范圍從170到2600納米。...

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引入快光電二極管的UPD系列

      UPD的系列快光電探測器是特別適合于從直流到25 GHz的光波形的測量。各種型號均上升時間短15 ps和覆蓋的光譜范圍從170到2600納米。

      所有光電二極管被封閉在緊湊和固體鋁外殼和可以與電池或外部電源被偏置。

      硅型光電檢測器的紫外擴(kuò)展版本是覆蓋光譜范圍從170到1100納米的商業(yè)產(chǎn)品。

      的獨特UV敏感的InGaAs光電檢測另一種類型的可用于在范圍檢測激光脈沖從350至1700納米,因此具有市售的特寬的光譜范圍和高速度。

      完美的阻抗匹配和微波技術(shù)保證沒有任何振鈴或文物脈沖形式測量。顧客可以自由地使用50Ω端接電阻為高速度操作,或用于獲得大的信號的高阻抗負(fù)載。這保證了不同的應(yīng)用極大的靈活性。

     在我們的組合  的BBA系列寬帶高增益放大器,高速光電檢測器是有利的替代昂貴和麻煩的雪崩光電二極管。

該UPD系列高速光電探測器是激光和光子學(xué)研究不可或缺的工具。

 

的光電二極管的特征

高速運行

上升時間:從15 ps的開始

帶寬:高達(dá)25 GHz的

光譜范圍:170 - 2600納米(紫外到紅外)

緊湊的設(shè)計

電池或外部電源

模型自由空間光束,
或FC / PC插座
或尾纖與SM光纖

 

的光電二極管的應(yīng)用

脈沖形態(tài)測量

脈沖寬度測量

精確同步

模式跳動監(jiān)控

外差測量

 

新光電型號:更快的上升時間和更寬的波長范圍

UPD-15-IR2-FC:快的InGaAs PIN探測器,上升時間<15 ps的,帶寬> 25 GHz的頻譜范圍800 - 1700納米,與FC / APC連接器光纖耦合輸入

UPD-35-IR2-P,UPD-35-IR2-D:快的InGaAs PIN光電探測器,上升時間<35 ps的,帶寬> 10 GHz的頻譜范圍800 - 1700納米,拋光或彌漫性窗口

UPD-35-UVIR-P,UPD-35-UVIR-D:快的InGaAs PIN光電探測器,上升時間<35 ps的,帶寬> 10 GHz時,光譜范圍350 - 1700納米,拋光或彌漫性窗口

UPD-50-SP,UPD-50-SD,UPD-50-UD,UPD-50-UP:快硅PIN光電探測器,上升時間50 ps的,下降時間50 ps的,帶寬> 7 GHz的
頻譜范圍170 - 1100納米或320 - 1100納米,拋光或彌漫性窗口

UPD-100-IR1-P:快光電探測器戈,上升時間<100 ps的,脈沖寬度(FWHM)300 PS,光譜范圍400 - 2000納米

UPD-3N-IR2-P:快速砷化銦鎵光電探測器,紅外擴(kuò)展范圍可達(dá)2.1&微M,上升時間150 ps的

UPD-5N-IR2-P:快速砷化銦鎵光電探測器,紅外擴(kuò)展范圍可達(dá)2.6&微M,上升時間為200 ps




Introducing the UPD Series of Ultrafast Photodiodes

      The UPD series of ultrafast photodetectors are best suited for measurement of optical waveforms from DC to 25 GHz. Various models feature rise times as short as 15 ps and cover the spectral range from 170 to 2600 nm.

      All photodiodes are enclosed in compact and solid aluminum housings and can be biased with a battery or an external power supply.

      The UV-extended versions of the silicon type photodetectors are the only commercial products that cover the spectral range from 170 to 1100 nm.

      Another type of unique UV-sensitive InGaAs photodetectors can be used for detecting laser pulses in the range from 350 to 1700 nm, thus having the widest spectral range and the highest speed commercially available.

      Perfect impedance matching and state-of-the-art microwave technology assure pulse form measurements without any ringing or artefacts. The customer is free to use a 50 Ω terminating resistor for highest speed operation, or a high impedance load for obtaining large signals. This guarantees maximum flexibility for diverse applications.

     In combination with our BBA series of wideband high-gain amplifiers, the high-speed photodetectors are an advantageous alternative to the expensive and cumbersome avalanche photodiodes.

The UPD series high-speed photodetectors are indispensable tools for laser and photonics research.

 

Features of the Photodiodes

Ultra High-Speed Operation

Rise Times: starting from 15 ps

Bandwidths: up to 25 GHz

Spectral Ranges: 170 - 2600 nm (UV to IR)

Compact Design

Battery or External Power Supply

Models for Free-Space Beam,
or with FC/PC Receptacle
or Pigtailed with SM Fiber

 

Applications of the Photodiodes

Pulse Form Measurements

Pulse Duration Measurements

Precise Synchronization

Mode Beating Monitoring

Heterodyne Measurements

 

New Photodetector Models Available: Faster Rise Times & Wider Wavelength Ranges

UPD-15-IR2-FC: Ultrafast InGaAs PIN photodetector, rise time < 15 ps, bandwidth > 25 GHz, spectral range 800 - 1700 nm, fiber-coupled input with FC/APC connector


UPD-35-IR2-P, UPD-35-IR2-D: Ultrafast InGaAs PIN photodetectors, rise time < 35 ps, bandwidth > 10 GHz, spectral range  800 - 1700 nm, with polished or diffuse window

UPD-35-UVIR-P, UPD-35-UVIR-D: Ultrafast InGaAs PIN photodetectors, rise time < 35 ps, bandwidth > 10 GHz, spectral range 350 - 1700 nm, with polished or diffuse window

UPD-50-SP, UPD-50-SD, UPD-50-UD, UPD-50-UP: Ultrafast Si PIN photodetector, rise time 50 ps, fall time 50 ps, bandwidth > 7 GHz,
spectral range 170 - 1100 nm or 320 - 1100 nm, with polished or diffuse window

UPD-100-IR1-P: Ultrafast Ge photodetector, rise time < 100 ps, pulsewidth (FWHM) 300 ps, spectral range 400 - 2000 nm

UPD-3N-IR2-P: Fast InGaAs photodetector, extended infrared range up to 2.1 &micro;m, rise time 150 ps

UPD-5N-IR2-P: Fast InGaAs photodetector, extended infrared range up to 2.6 &micro;m, rise time 200 ps

 

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